DMN32D2LDF-7 KDV 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
| 最大漏极电流Id
Drain Current |
400mA/0.4A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
2.2?@ VGS = 1.8V, ID = 20mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.2V |
| 耗散功率Pd
Power Dissipation |
280mW/0.28W |
| Description & Applications |
COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features ? Common Source Dual N-Channel MOSFET ? Low On-Resistance ? Very Low Gate Threshold Voltage, 1.2V max ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Small Surface Mount Package ? ESD Protected Gate ? Lead Free By Design/RoHS Compliant ? "Green" Device ? Qualified to AEC-Q 101 Standards for High Reliability |
| 描述与应用 |
通用源双N沟道增强型场效应晶体管 特点 ?通用源双N沟道MOSFET ?低导通电阻 ?非常低的栅极阈值电压，1.2V最大 ?低输入电容 ?开关速度快 ?低输入/输出漏 ?小型表面贴装封装 ?ESD保护门 ?对无铅要求的设计/符合限制有害物质指令（RoHS）规范要求 ?“绿色”设备 ?符合AEC-Q101标准的高可靠性 |
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