2SK711-V RBV 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
16~32ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-2.5v |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
?Field Effect Transistor Silicon N Channel Junction Type ?High Frequency Amplifier Applications ?AM High Frequency Amplifier Applications ?Audio Frequency Amplifier Applications ? High |Yfs|: |Yfs| = 25 mS (typ.) ? Low Ciss: Ciss = 7.5 pF (typ.) |
| 描述与应用 |
?场效应晶体管的硅N沟道结型 ?高频放大器的应用 ?AM高频放大器的应用 ?声频放大器的应用 ?高| YFS|：| YFS| =25毫秒（典型值） ?低CISS：西塞=7.5 pF的（典型值） |
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