SSM6N36FE NX 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
最大漏极电流Id
Drain Current |
500mA/0.5A |
源漏极导通电阻Rds
Drain-Source On-State Resistance |
630m?@ VGS = 5V, ID = 200mA |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.35~1.0V |
耗散功率Pd
Power Dissipation |
150mW/0.15W |
Description & Applications |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ?High-Speed Switching Applications ? 1.5-V drive ? Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) |
描述与应用 |
东芝场效应晶体管的硅N沟道MOS类型 ?高速开关应用 ?1.5-V驱动器 ?低导通电阻:RON= 1.52Ω(最大值)(@ VGS= 1.5 V) :RON =1.14Ω(最大)(@ VGS=1.8 V) :RON =0.85Ω(最大值)(@ VGS=2.5 V) RON= 0.66Ω(最大)(@ VGS=4.5 V) :RON =0.63Ω(最大)(@ VGS=5.0 V) |
技术文档PDF下载 |
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