SSM6P40TU PP2 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
0 |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
226m?@ VGS = -10V, ID = -1000mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.8~-2.0V |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications ? 4.0 V drive ? P-ch, 2-in-1 ? Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V) |
| 描述与应用 |
TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications ? 4.0 V drive ? P-ch, 2-in-1 ? Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V) |
| 技术文档PDF下载 |
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