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TC7SP332WBG k 的参数 |
| 逻辑功能
Logic Function |
变换器 Translator |
| 位数
Number of Bits |
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| 输入类型
Input Type |
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| 输出类型
Output Type |
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| 数据速率
Data Rate |
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| 通道数
Number of Channels |
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| 输出/通道数
Number of Outputs/Channel |
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| 差分 - 输入:输出
Differential - Input:Output |
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| 传播延迟（最大值）
Propagation Delay (Max) |
1.0ns |
| 电源电压
Voltage - Supply |
3 V ~ 3.6 V |
| Description & Applications |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Dual supply 2-Input OR Gate with Level Translator The TC7SP332 is a dual supply, advanced high-speed CMOS 2-input dual supply voltage interface OR gate fabricated with silicon gate CMOS technology. It is also designed with over voltage tolerant inputs and outputs up to 3.6 V. Designed for use as an interface between a 1.2-V, 1.5-V, 1.8-V, or 2.5-V bus and a 1.8-V, 2.5-V or 3.3-V bus in mixed 1.2-V, 1.5-V, 1.8-V or 2.5-V/1.8-V, 2.5-V or 3.3-V supply systems. All inputs are equipped with protection circuits against static discharge. Features ? Level converter for interfacing 1.2-V to 1.8-V, 1.2-V to 2.5-V, 1.2-V to 3.3-V, 1.5-V to 2.5-V, 1.5-V to 3.3-V, 1.8-V to 2.5-V, 1.8-V to 3.3-V or 2.5 V to 3.3-V system. ? High-speed operation : tpd = 6.8 ns (max) (VCCA = 2.5 ± 0.2 V, VCCB = 3.3 ± 0.3 V) pd = 7.8 ns (max) (VCCA = 1.8 ± 0.15 V, VCCB = 3.3 ± 0.3 V) tpd = 9.0 ns (max) (VCCA = 1.5 ± 0.1 V, VCCB = 3.3 ± 0.3 V) tpd = 31 ns (max) (VCCA = 1.2 ± 0.1 V, VCCB = 3.3 ± 0.3 V) tpd = 9.5 ns (max) (VCCA = 1.8 ± 0.15 V, VCCB = 2.5 ± 0.2 V) pd = 10.5 ns (max) (VCCA = 1.5 ± 0.1 V, VCCB = 2.5 ± 0.2 V) pd = 32 ns (max) (VCCA = 1.2 ± 0.1 V, VCCB = 2.5 ± 0.2 V) tpd = 37 ns (max) (VCCA = 1.2 ± 0.1 V, VCCB = 1.8 ± 0.15 V) ? Output current : IOH/IOL = ±12 mA (min) (VCC = 3.0 V) IOH/IOL = ±9mA (min) (VCC = 2.3 V) IOH/IOL = ±3 mA (min) (VCC = 1.65 V) ? Latch-up performance: -300 mA ? ESD performance: Machine model ≥ ±200 V Human body model ≥ ±2000 V ? Ultra-small package: WCSP6 ? Power-down protection is provided on all inputs and outputs |
| 描述与应用 |
东芝CMOS数字集成电路硅单片 2双电源电平转换器的输入或门 TC7SP332是双电源，先进的高速CMOS 2输入双电源电压接口或门制造技术与 硅栅CMOS技术。 还设计有过电压容限输入和 输出高达3.6 V。 设计用于为1.2-V，1.5-V，1.8-V之间的一个接口， 或2.5-V总线和1.8-V，2.5 V或3.3 V总线在混合1.2 V，1.5 V， 1.8-V或2.5-V/1.8-V，2.5 V或3.3 V电源系统。 所有输入都配有保护电路防止静电放电。 ?接口1.2-V，1.8 V，1.2-V到2.5 V，1.2-V到3.3 V，1.5 V，2.5 V，1.5 V至3.3 V，1.8 V的电平转换器 2.5 V，1.8 V至3.3 V或2.5 V至3.3 V系统。 ?高速操作：TPD =6.8纳秒（最大）（VCCA=2.5±0.2 V VCCB=3.3±0.3 V） PD= 7.8纳秒（最大）（VCCA=1.8±0.15 V，VCCB=3.3±0.3 V） TPD =9.0 ns（最大）（VCCA=1.5±0.1 V VCCB=3.3±0.3 V） TPD =31 ns（最大）（VCCA=1.2±0.1 V VCCB=3.3±0.3 V） TPD =9.5纳秒（最大值）（VCCA=1.8±0.15 V，VCCB=2.5±0.2 V） PD= 10.5 ns（最大）（VCCA=1.5±0.1 V VCCB=2.5±0.2 V） PD= 32 ns（最大）（VCCA=1.2±0.1 V，VCCB=2.5±0.2 V） TPD =37 ns（最大）（VCCA=1.2±0.1 V VCCB=1.8±0.15 V） ?输出电流：IOH/ IOL=±12 mA（分钟）（VCC=3.0 V），IOH/ IOL=±9毫安（分钟）（VCC=2.3 V） IOH/ IOL=±3 mA（分钟）（VCC= 1.65 V） ?闭锁性能：-300毫安 ?ESD性能：机器型号≥±200 V 人体模型≥±2000 V ?超小封装：WCSP6 ?掉电保护是对所有的输入和输出 |
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