MBT3904DW1T1 MA 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
40V |
集电极连续输出电流IC
Collector Current(IC) |
200mA |
截止频率fT
Transtion Frequency(fT) |
300MHz |
直流电流增益hFE
DC Current Gain(hFE) |
300 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
300mV |
耗散功率Pc
Power Dissipation |
150mW |
Description & Applications |
Features ? Dual General Purpose Transistors ? hFE, 100?300 ? Low VCE(sat), ≤ 0.4 V ? Simplifies Circuit Design ? Reduces Board Space ? Reduces Component Count ? Available in 8 mm, 7?inch/3,000 Unit Tape and Reel ? Pb?Free Packages are Available |
描述与应用 |
特点 ?双通用晶体管 ?HFE,100-300 ?低VCE(sat),≤0.4 V ?简化电路设计 ?缩小板级空间 ?减少元件数量 ?可在8毫米,7寸/3,000组带和卷轴 ?无铅包可用 |
技术文档PDF下载 |
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