SMBTA92M S2D 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-300V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-300V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
50MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
40 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-500mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
1500mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? PNP Silicon High-Voltage Transistor ? High breakdown voltage ? Low collector-emitter saturation voltage ? Complementary type: SMBTA 42M (NPN) |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP硅高压晶体管 ?高击穿电压 ?低集电极 - 发射极饱和电压 ?互补的类型：SMBTA42M（NPN） |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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