MMDT5551 K4N 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
180V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
160V |
| 集电极连续输出电流IC
Collector Current(IC) |
200mA |
| 截止频率fT
Transtion Frequency(fT) |
100~300MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
80~250 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200mV |
| 耗散功率Pc
Power Dissipation |
200mW |
| Description & Applications |
Features ? DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR ? Epitaxial Planar Die Construction ? Complementary PNP Type Available (MMDT5401) ? Ideal for Medium Power Amplification and Switching ? Ultra-Small Surface Mount Package |
| 描述与应用 |
特点 ?双NPN小信号表面贴装晶体管 ?外延平面电路小片建设 ?互补PNP类型（MMDT5401） ?非常适于中等功率放大和开关 ?超小型表面贴装封装 |
| 技术文档PDF下载 |
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