MMDT3906-7 K3N 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-40V |
| 集电极连续输出电流IC
Collector Current(IC) |
-200mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
250MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
100~300 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-400mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
200mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR ? Epitaxial Planar Die Construction ? Ideal for Low Power Amplification and Switching ? Ultra-Small Surface Mount Package |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?双PNP小信号面装载晶体管 ?外延平面电路小片建设 ?适用于低功率放大和开关 ?超小型表面贴装封装 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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