SSM6N37FE SU 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
最大漏极电流Id
Drain Current |
250mA/0.25A |
源漏极导通电阻Rds
Drain-Source On-State Resistance |
2200m?@ VGS = 4.5V, ID = 100mA |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.35~1.0V |
耗散功率Pd
Power Dissipation |
150mW/0.15W |
Description & Applications |
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ? High-Speed Switching Applications ? Analog Switching Applications ? 1.5-V drive ? Suitable for high-density mounting due to compact package ? Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V) |
描述与应用 |
东芝场效应晶体管的硅N沟道MOS类型 ?高速开关应用 ?模拟开关应用 ?1.5-V驱动器 ?适用于高密度安装由于紧凑的封装 ?低导通电阻RDS(ON)= 5.60Ω(最大)(@ VGS= 1.5 V) RDS(ON)= 4.05Ω(最大值)(@ VGS=1.8 V) RDS(ON)= 3.02Ω(最大值)(@ VGS=2.5 V) RDS(ON)=2.20Ω(最大)(@ VGS= 4.5 V) |
技术文档PDF下载 |
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