SI7212DN-T1-GE3 7212 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
4.9A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
39m?@ VGS =4.5V, ID =6.6A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.6V |
| 耗散功率Pd
Power Dissipation |
1.3W |
| Description & Applications |
Dual N-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? 100 % Rg Tested ? Space Savings Optimized for Fast Switching ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Synchronous Rectification ? Intermediate Driver |
| 描述与应用 |
双N沟道30-V（D-S）的MOSFET 特点 ??无卤素根据IEC 61249-2-21定义 ??100％的Rg测试 ??节省空间优化快速切换 ??符合RoHS指令2002/95/EC 应用 ??同步整流 ??中间驱动程序 |
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