2SK0663GQL 2BQ 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
55v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-55v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
1~12ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-5v |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
?Silicon N-Channel Junction FET ?For low-frequency amplification For switching ?Low noise-figure (NF) ?High gate to drain voltage VGDO ?Low noise-figure (NF) ?High gate to drain voltage VGDO |
| 描述与应用 |
?硅N沟道结型场效应管 ?对于低频放大切换 ?低噪声系数（NF） ?高栅漏电压VGDO ?低噪声系数（NF） ?高栅漏电压VGDO |
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