SSM6J213FE PS 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
-2.6A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
250m?@ VGS = -1.5V, ID = -250mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.3~-1.0V |
| 耗散功率Pd
Power Dissipation |
700mW/0.7W |
| Description & Applications |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) ○ Power Management Switch Applications ? 1.5-V drive ? Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) |
| 描述与应用 |
东芝场效应晶体管的硅P沟道MOS型（U-MOSⅥ） ○电源管理开关应用 ?1.5-V驱动器 ?低导通电阻：RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) |
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