MT6L58AE AX 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
10V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
5V |
| 集电极连续输出电流IC
Collector Current(IC) |
15mA/40mA |
| 截止频率fT
Transtion Frequency(fT) |
10000MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
70~140/80~160 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
100mW |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Planar Type ? Two devices are built in to the super-thin and extreme super mini (6 pins) package: ES6 ? VHF~UHF Band Low Noise Amplifier Applications |
| 描述与应用 |
特点 ?东芝晶体管NPN硅外延平面型 ?两个设备都建在超薄和极端超小型（6引脚）封装：ES6 ?VHF?UHF频段低噪声放大器的应用 |
| 技术文档PDF下载 |
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