UP04214GOLBF BR 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
250mV |
| 耗散功率Pc
Power Dissipation |
125mW |
| Description & Applications |
Features ? Silicon NPN epitaxial planar type ? Two elements incorporated into one package (transistors with built-in resistor) ? Reduction of the mounting area and assembly cost by one half ? For switching/digital circuits |
| 描述与应用 |
特点 ?NPN硅外延平面型 ?两个要素纳入一个包（内置电阻晶体管） ?减少安装面积和装配成本的一半 ?对于开关/数字电路 |
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