2SB1722GOL 4R 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-100V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?100V |
| 集电极连续输出电流IC
Collector Current(IC) |
-20mA |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~700 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率Pc
PoWer Dissipation |
125mW/0.125W |
| Description & Applications |
PNP Silicon epitaxial planar transistor For high breakdown voltage low-frequency amplification Features ? High collector-emitter voltage (Base open) VCEO ? SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 |
PNP硅外延平面晶体管 对于高击穿电压的低频放大 特点 ?高集电极 - 发射极电压（基本打开）VCEO ?SS-迷你型包装，让精简的设备和通过自动插入磁带包装 |
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