UNR91A1GOL CE 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-80mA |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
35 |
| 截止频率fT
Transtion Frequency(fT) |
80MHz |
| 耗散功率Pc
Power Dissipation |
0.125W/125mW |
| Description & Applications |
Features ?Transistors with built-in Resistor ?Silicon PNP epitaxial planer transistor ?Optimum for high-density mounting and downsizing of the equipment ?Contribute to low power consumption |
| 描述与应用 |
特点 ?内置电阻晶体管 ?PNP硅外延刨床晶体管 ?最适用于高密度设备的安装和精简 ?有助于低功耗 |
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