HSMS-286R-TR1G ZZ 的参数 |
| 反向电压Vr
Reverse Voltage |
|
| 平均整流电流Io
AVerage Rectified Current |
1mA |
| 最大正向压降VF
Forward Voltage(Vf) |
350mV/0.35V |
| 最大耗散功率Pd
Power dissipation |
|
| Description & Applications |
. Avago’s HSMS?286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. ? High Detection Sensitivity: up to 50 mV/μW at 915 MHz up to 35 mV/μW at 2.45 GHz up to 25 mV/μW at 5.80 GHz ? Low FIT (Failure in Time) Rate* ? HSMS-286K Grounded Center Leads Provide up to 10 dB Higher Isolation ? Matched Diodes for Consistent Performance ? Better Thermal Conductivity for Higher Power Dissipation ?Surface Mount Microwave Schottky Detector Diodes ? Ring Quad Schottky Barrier Diodes |
| 描述与应用 |
。Avago Technologies（安华高科技）的直流偏置检波二极管HSMS-286x系列的设计和优化，从915 MHz到5.8 GHz。他们是理想的RF/ ID和射频标签的应用，以及大信号检测，调制，射频到直流转换或电压倍增。 ?检测灵敏度高：到50 mV/μW在915 MHz 高达35毫伏/μW在2.45GHz 高达25毫伏/μW在5.80 GHz ?低FIT（故障时间）率* ?HSMS-286K接地中心信息提供多达高出10 dB的隔离 ?一致的性能匹配二极管 ?更好的导热性更高的功率耗散 ?表面贴装微波肖特基检波二极管 ?环四肖特基二极管 |
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