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型号: |
HSMS-286R-TR1G |
标记/丝印/代码/打字: |
ZZ |
厂家: |
AGILENT |
封装: |
SOT-363/SC70-6 |
批号: |
06NOPB |
库存数量: |
0 |
所属分类: |
二极管Diodes 肖特基势垒二极管SBDSchottky Barrier Diodes 单管Single |
技术文档PDF: |
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HSMS-286R-TR1G ZZ 的参数 |
反向电压Vr
Reverse Voltage |
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平均整流电流Io
AVerage Rectified Current |
1mA |
最大正向压降VF
Forward Voltage(Vf) |
350mV/0.35V |
最大耗散功率Pd
Power dissipation |
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Description & Applications |
. Avago’s HSMS?286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. ? High Detection Sensitivity: up to 50 mV/μW at 915 MHz up to 35 mV/μW at 2.45 GHz up to 25 mV/μW at 5.80 GHz ? Low FIT (Failure in Time) Rate* ? HSMS-286K Grounded Center Leads Provide up to 10 dB Higher Isolation ? Matched Diodes for Consistent Performance ? Better Thermal Conductivity for Higher Power Dissipation ?Surface Mount Microwave Schottky Detector Diodes ? Ring Quad Schottky Barrier Diodes |
描述与应用 |
。Avago Technologies(安华高科技)的直流偏置检波二极管HSMS-286x系列的设计和优化,从915 MHz到5.8 GHz。他们是理想的RF/ ID和射频标签的应用,以及大信号检测,调制,射频到直流转换或电压倍增。 ?检测灵敏度高:到50 mV/μW在915 MHz 高达35毫伏/μW在2.45GHz 高达25毫伏/μW在5.80 GHz ?低FIT(故障时间)率* ?HSMS-286K接地中心信息提供多达高出10 dB的隔离 ?一致的性能匹配二极管 ?更好的导热性更高的功率耗散 ?表面贴装微波肖特基检波二极管 ?环四肖特基二极管 |
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相关型号列表 |
型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
HSMS-286c |
T2+ |
AGILENT |
05+ |
SOT-23/SC-59 |
0 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-双管串联1 Pair Series Connection |
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HSMS-2860-TR1 |
TO |
AGILENT |
04+ |
SOT-23/SC-59 |
150 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-单管Single |
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HSMS-286C |
T2+ |
AGILENT |
04+ |
SOT-323/SC-70 |
0 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-双管串联1 Pair Series Connection |
查看 |
HSMS-286R-TR1G |
ZZ |
AGILENT |
06NOPB |
SOT-363/SC70-6 |
0 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-单管Single |
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HSMS-286R-T |
ZZ |
AGILENT |
06+ROHS |
SOT-363 |
3000 |
二极管Diodes |
查看 |
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