SSM6N17FU DM 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
7V |
| 最大漏极电流Id
Drain Current |
100mA/0.1A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
20?@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.9~1.5V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications ●Suitable for high-density mounting due to compact package ●High drain-source voltage ●High speed switching |
| 描述与应用 |
东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 模拟开关应用 ●适用于高密度安装由于紧凑的封装 ●高的漏源电压 ●高速开关 |
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