NTHD4P02FT1G C3E 的参数 |
| MOSFET 类型
Type |
P沟道 P-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-12V |
| 最大漏极电流Id
Drain Current |
-2.2A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
155m?@ VGS =-4.5V, ID =-2.2A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.6~-1.2V |
| DIODE 类型
Type |
肖特基二极管SBD Schottky Barrier Diodes |
| 反向电压Vr
Reverse Voltage |
20V |
| 平均整流电流Io
Average Rectified Current |
2.2A |
| 最大正向压降VF
Forward Voltage(Vf) |
0.48V@IF=500mA |
| 耗散功率Pd
Power Dissipation |
1.1W |
| Description & Applications |
Power MOSFET and Schottky Diode Features ? Leadless SMD Package Featuring a MOSFET and Schottky Diode ? 40% Smaller than TSOP?6 Package with Similar Thermal Characteristics ? Independent Pinout to each Device to Ease Circuit Design ? Ultra Low VF Schottky ? Pb?Free Package is Available Applications ? Li?Ion Battery Charging ? High Side DC?DC Conversion Circuits ? High Side Drive for Small Brushless DC Motors ? Power Management in Portable, Battery Powered Products |
| 描述与应用 |
功率MOSFET和肖特基二极管 特点 ?无铅SMD封装的MOSFET和肖特基二极管 ?TSOP-6封装具有类似的温度小于40％ 特性 ?独立接脚分布到每个设备易于电路设计 ?超低VF肖特基 ?无铅包装是可用 应用 ?锂离子电池的充电 ?高端DC-DC转换电路 ?小型无刷直流电动机的高压侧驱动 ?便携式，电池供电产品的电源管理 |
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