SI5515CDC EHU 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V/-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V/8V |
| 最大漏极电流Id
Drain Current |
10A/-10A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
50m?@ VGS =1.8V, ID =5.1A/156m?@ VGS =-1.8V, ID =-2.5A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~0.8V/-0.4~-0.8V |
| 耗散功率Pd
Power Dissipation |
3.1W |
| Description & Applications |
N- and P-Channel 20 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Trench FET Power MOSFETs ? 100 % Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Load Switch for Portable Devices |
| 描述与应用 |
N沟道和P沟道20 V（D-S）的MOSFET 特点 ??无卤素根据IEC 61249-2-21定义 ??沟槽FET功率MOSFET ??100％的Rg测试 ??符合RoHS指令2002/95/EC 应用 ??用于便携式设备的负载开关 |
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