DTD122JK G4C 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
基极输入电阻R1
Input Resistance(R1) |
0.22KΩ/Ohm |
基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
4.7KΩ/Ohm |
电阻比(R1/R2)
Resistance Ratio |
0.047 |
直流电流增益hFE
DC Current Gain(hFE) |
47 |
截止频率fT
Transtion Frequency(fT) |
250MHz |
耗散功率Pc
Power Dissipation |
0.2W/200mW |
Description & Applications |
Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy 4)Higher mounting densities can be achieved |
描述与应用 |
特性 1)内置启用偏置电阻器的逆变器电路无需连接外部输入电阻配置 2)偏置电阻组成的薄膜电阻完全隔离,允许负偏置输入。他们也有优势,几乎完全消除了寄生效应。 3)只有开/关条件需要设置操作,使装置的设计容易 4)高密度安装可以实现 |
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