MMBF102 61Y 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
25v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-25v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
2~20ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-8v |
| 耗散功率Pd
Power Dissipation |
225mW/0.225W |
| Description & Applications |
?N-Channel RF Amplifier Features ? This device is designed primarily for electronic switching applications such as low On Resistance analog switching. ? Sourced from process 50 ?This device is designed primarily for electronic switching applications such as low On Resistance analog switching |
| 描述与应用 |
?N沟道RF放大器 ?本设备主要用于电子开关应用：如低导通电阻模拟开关设计。 ?来源于过程50 ?本设备主要用于电子开关应用：如低导通电阻模拟开关 |
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