2PD602AS xS 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
截止频率fT
Transtion Frequency(fT) |
180MHz |
直流电流增益hFE
DC Current Gain(hFE) |
170~340 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
600mV/0.6V |
耗散功率Pc
Power Dissipation |
250mW/0.25W |
Description & Applications |
NPN general purpose transistor FEATURES ? High current ? Low voltage APPLICATIONS ? General purpose switching and amplification. |
描述与应用 |
NPN通用晶体管 特点 ?高电流 ?低电压 应用 ?通用开关和放大。 |
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