BG3130 KA 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
8V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
6~15V/6~15V |
| 最大漏极电流Id
Drain Current |
25mA |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.7/0.6 |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
DUAL N-Channel MOSFET Tetrode ? Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) ? Two AGC amplifiers in one single package ? Integrated gate protection diodes ? High AGC-range, low noise figure, high gain ? Improved cross modulation at gain reduction |
| 描述与应用 |
双N沟道MOSFET的四极管 ?两个UHF和VHF调谐器，例如增益控制输入级（NTSC，PAL） ?两个AGC放大器在一个单一封装 ?集成的栅极保护二极管 ?高AGC范围，低噪声系数，高增益 ?改进的交叉调制增益降低 |
| 技术文档PDF下载 |
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