MMUN2212LT1G A8B 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
60-100 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.25W /250mW |
| Description & Applications |
Features ? Simplifies Circuit Design ? Reduces Board Space and Component Count ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 |
特性 ?简化电路设计 ?缩小板级空间和元件数量 ?这些器件是无铅，无卤/不含BFR，并符合RoHS标准 |
| 技术文档PDF下载 |
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