PMBFJ111 P11 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
40v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-40v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
20ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-10~-3v |
| 耗散功率Pd
Power Dissipation |
300mW/0.3W |
| Description & Applications |
?N-channel junction FETs ?High-speed switching ?Interchangeability of drain and source connections ?Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). ?Analog switches ?Commutators ?Multiplexers ? Thin and thick film hybrids. |
| 描述与应用 |
?N沟道结场效应晶体管 ?高速开关 ?漏极和源极连接的互换性 ?在零电压（<30?为PMBFJ111），低导通电阻。 ?模拟开关 ?交换机 ?多路复用器 ?薄和厚薄膜混合动力汽车。 |
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