RN1968CT J7 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
0.468 |
| Q2基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.468 |
| 直流电流增益hFE
DC Current Gain(hFE) |
120 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
50mW |
| Description & Applications |
Features ?TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) ?Two devices are incorporated into a fine pitch Small Mold (6 pin) package. ?Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. ?Complementary to RN2967CT to RN2969CT Applications ?Switching Applications ?Inverter Circuit Applications ?Interface Circuit Applications ?Driver Circuit Applications |
| 描述与应用 |
特点 ?东芝晶体管的硅NPN外延式（PCT程序）（偏置电阻内置晶体管） ?两个设备都纳入细间距小型模具（6针）封装。 ?将偏置电阻晶体管，减少了部件数量。减少零件数，使制造更加紧凑的设备和节省组装成本。 ?互补RN2967CT的到RN2969CT 应用 ?开关应用 ?逆变器电路应用 ?接口电路的应用 ?驱动器电路应用 |
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