VEC2402 BH 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
4A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
48m?@ VGS = 10V, ID = 2000mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.0~2.4V |
| 耗散功率Pd
Power Dissipation |
1W |
| Description & Applications |
N-Channel Silicon MOSFET General-Purpose Switching Device Features ? The best suited for inverter applications. ? Low ON-resistance. ? Composite type facilitating high-density mounting. ? 4V drive. ? Mounting high 0.75mm. |
| 描述与应用 |
N-沟道硅MOSFET 通用开关设备 特点 ?逆变器应用最适合。 ?低导通电阻。 ?复合型，促进高密度安装。 ?4V驱动器。 ?安装高0.75毫米。 |
| 技术文档PDF下载 |
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