MGSF3454VT1 3PT 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
4.2A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.0V |
| 耗散功率Pd
Power Dissipation |
2W |
| Description & Applications |
Power MOSFET 4 Amps, 30 Volts N?Channel TSOP?6 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc?dc converters, power management in portable and battery?powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. ? Pb?Free Packages are Available ? Low RDS(on) Provides Higher Efficiency and Extends Battery Life ? Miniature SOT?23 Surface Mount Package Saves Board Space ? IDSS Specified at Elevated Temperature |
| 描述与应用 |
功率MOSFET 4安培，30伏特 N沟道TSOP-6 这些微型表面贴装MOSFET的低RDS（ON）保证 最小的功率损耗，节约能源，使这些设备的理想选择 用于在小的电源管理电路。典型的应用是DC-DC转换器，电源管理在便携式和 电池供电的产品，如电脑，打印机，PCMCIA卡，手机和无绳电话。 ?无铅包可用 ?低的RDS（on） 提供更高的效率和延长电池寿命 ?微型SOT-23表面贴装封装节省电路板空间 ?IDSS指定高温 |
| 技术文档PDF下载 |
在线阅读  |
