UP0459800L 3S 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V/50V |
| 集电极连续输出电流IC
Collector Current(IC) |
15mA/100mA |
| 截止频率fT
Transtion Frequency(fT) |
650MHz/150MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
65~260/160~460 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV |
| 耗散功率Pc
Power Dissipation |
125mW |
| Description & Applications |
Features ? Silicon NPN epitaxial planar type ? Two elements incorporated into one package (Each transistor is separated) ? Reduction of the mounting area and assembly cost by one half ? For high frequency amplification(Tr1) ? For low frequency amplification(Tr2) |
| 描述与应用 |
特点 ?NPN硅外延平面型 ?两个要素纳入一个包（每个晶体管分离） ?减少安装面积和装配成本的一半 ?对于高频放大（TR1） ?对于低频放大（TR2） |
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