QST9 T09 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-30V |
集电极连续输出电流IC
Collector Current(IC) |
-1A |
Q1基极输入电阻R1
Input Resistance(R1) |
320MHz |
Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
270~680 |
Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-150mV |
Q2基极输入电阻R1
Input Resistance(R1) |
500mW |
Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? General purpose amplification (?30V, ?1A) ? Collector current is large. ? Collector saturation voltage is low.VCE(sat) : max. ?350mV At IC = ?500mA / IB = ?25mA Application ? Low frequency amplifier Driver |
Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?通用放大(-30V,-1A) ?集电极电流大。 ?集电极饱和电压low.VCE(sat):最大。在IC-350MV=500毫安/ IB=25毫安的 应用 ?低频放大器驱动器 |
直流电流增益hFE
DC Current Gain(hFE) |
|
截止频率fT
Transtion Frequency(fT) |
|
耗散功率Pc
Power Dissipation |
|
Description & Applications |
|
描述与应用 |
|
技术文档PDF下载 |
在线阅读 ![](images/pdf.jpg) |