SUR491JPF BX 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
|
| 截止频率fT
Transtion Frequency(fT) |
200MHz/150MHz |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features ? Epitaxial planar NPN/PNP silicon transistor ? Both SRC1202 chip and SRA2202 chip in SOT-363 package ? Simplify circuit design ? Reduce a quantity of parts and manufacturing process Description ? Dual chip digital transistor |
| 描述与应用 |
特点 ?外延平面NPN/ PNP硅晶体管 ?双方SRC1202芯片和SRA2202芯片SOT-363封装 ?简化电路设计 ?减少了部件数量和制造工艺 描述 ?双芯片数字晶体管 |
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