FDN359AN 359 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
2.7A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.046Ω/Ohm @2.7A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1-3V |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
N-Channel Logic Level PowerTrench TM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain uperior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. 2.7 A, 30 V. RDS(ON) = 0.046 W @ VGS = 10 V RDS(ON) = 0.060 W @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. |
| 描述与应用 |
N沟道逻辑电平的PowerTrench TM MOSFET 概述 这N沟道逻辑电平MOSFET产生 采用飞兆半导体先进的 PowerTrench进程，已特别定制 尽量减少对通态电阻，但维持优越的开关性能。 这些器件非常适用于低电压，电池供电应用中低线的功率 损耗和快速开关是必需的。 开关速度非常快。 低栅极电荷（典5NC） 高功率版本的行业标包相同的引脚SOT-23高出30％ 功率处理能力 |
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