ZXTD09N50DE6TA d6 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
1A |
| 截止频率fT
Transtion Frequency(fT) |
215MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
350 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
120mV |
| 耗散功率Pc
Power Dissipation |
900mW |
| Description & Applications |
Features ? Super SOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ? Low Equivalent On Resistance ? Low Saturation Voltage ? IC=1A Continuous Collector Current ? SOT23-6 package APPLICATIONS ? LCD Backlighting inverter circuits ? Boost functions in DC-DC converters |
| 描述与应用 |
特点 ?超级SOT双50V NPN硅低饱和开关晶体管 ?低等效电阻 ?低饱和电压 ?IC= 1A连续集电极电流 ?SOT23-6封装 应用 ?LCD背光逆变器电路 ?升压DC-DC转换器的功能 |
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