NTHD2102PT1G D5X 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-8V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-8V |
| 最大漏极电流Id
Drain Current |
-3.4A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
160m?@ VGS = -1.8V, ID = -1A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.45~-1.5V |
| 耗散功率Pd
Power Dissipation |
1.1W |
| Description & Applications |
Power MOSFET Features ? Offers an Ultra Low RDS(on) Solution in the ChipFET Package ? Miniature ChipFET Package 40% Smaller Footprint than TSOP?6 making it an Ideal Device for Applications where Board Space is at a Premium ? Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics ? Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics ? Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required ? Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology ? Pb?Free Package is Available Applications ? Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications ? Charge Control in Battery Chargers ? Buck and Boost Converters |
| 描述与应用 |
功率MOSFET 特点 提供超低RDS（ON） ?解决方案：在ChipFET包装 ?微型ChipFET包装40％更小的体积比TSOP-6封装使其成为理想的装置应用电路板空间是一个溢价 ?薄型（<1.1毫米）允许它能够轻松融入极薄环境，如便携式电子 ?专为提供低RDS（ON）的栅极电压低至1.8 V，用于便携式电子产品在许多逻辑IC的工作电压 ?简化电路设计，因为其他的栅极电压的升压电路不要求 ?工作在标准逻辑电平栅极驱动，便于将来迁移到下级使用相同的基本拓扑结构 ?无铅包装是可用 应用 ?优化的便携式设备，如MP3播放器，手机，数码相机，个人数字助理和其它便携式应用的电池和负载管理应用程序 ?电池充电器的充电控制 ?降压与升压转换器 |
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