UP0487800L 7Y 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
7V |
| 最大漏极电流Id
Drain Current |
100mA/0.1A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
1200m?@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.9~1.5V |
| 耗散功率Pd
Power Dissipation |
125mW/0.125W |
| Description & Applications |
Silicon N-channel MOSFET For switching ■ Features ? Allowing 2.5 V drive ? Incorporating a built-in gate protection-diode ? Reduction of the mounting area and assembly cost by one half |
| 描述与应用 |
硅N沟道MOSFET 对于开关 ■特点 ?允许2.5 V驱动器 ?集成了内置栅极保护二极管 ?减少安装面积和装配成本的一半 |
| 技术文档PDF下载 |
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