XP161A11A1PR 11 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
16A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.065Ω/Ohm @2A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
10-2.5V |
| 耗散功率Pd
Power Dissipation |
2W |
| Description & Applications |
Power MOSFET ■GENERAL DESCRIPTION The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. FEATURES Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V Rds(on)=0.105Ω@ Vgs=4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-89 |
| 描述与应用 |
功率MOSFET ■概述 XP161A11A1PR是一个N沟道功率MOSFET具有低通态电阻和超高速开关特性。 由于高速开关是可能的，该IC可有效地设置从而节省能源。 栅极保护二极管是内置的，以防止静电损坏。 小SOT-89封装，使高密度安装的可能 低导通电阻的R（on）=0.065Ω@ VGS= 10V RDS（ON）=0.105Ω@ VGS= 4.5V 超高速开关 内置栅极保护二极管 驱动电压：4.5V N沟道功率MOSFET DMOS结构式 小封装：SOT-89 |
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