KRC855U NE 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
0.047 |
| Q2基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.047 |
| 直流电流增益hFE
DC Current Gain(hFE) |
|
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features ?EPITAXIAL PLANAR PNP TRANSISTOR ?INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. ?With Built-in Bias Resistors. ?Simplify Circuit Design. ?Reduce a Quantity of Parts and Manufacturing Process. ?High Packing Density |
| 描述与应用 |
特点 ?外延平面PNP晶体管 ?接口电路和驱动器电路中的应用。 ?内置偏置电阻器。 ?简化电路设计。 ?减少了部件数量和制造工艺。 ?高密度封装 |
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