2SC4702XV XV 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
300V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
300V |
集电极连续输出电流IC
Collector Current(IC) |
50mA |
截止频率fT
Transtion Frequency(fT) |
80MHz |
直流电流增益hFE
DC Current Gain(hFE) |
60~150 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
<500mV/0.5V |
耗散功率Pc
Power Dissipation |
150mW/0.15W |
Description & Applications |
Features ?Silicon NPN Epitaxial ?High breakdown voltage VCEO = 300 V ?Small Cob Cob = 1.5 pF Typ. |
描述与应用 |
特点 ?NPN硅外延 ?高击穿电压VCEO=300 V ?小COB COB=1.5 pF的典型 |
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