2SK771 FJ5 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
6~32ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-2.5v |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
?Field Effect Transistor Silicon N Channel Junction Type Low-Frequency General-Purpose Amplifier Applications Applications Variable resistors, analog switches, AF amplifier, constant-current circuit. Features Adoption of FBET process. Ultrasmall-sized package permitting sets to be made smaller and slimmer. |
| 描述与应用 |
?场效应晶体管的硅N沟道结型 低频通用 放大器的应用 应用 可变电阻器，模拟开关，AF放大器， 恒流电路。 特点 通过过程FBET。 超小尺寸封装，允许集 体积更小，更薄。 |
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