2SK2218-5 KN 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
15v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-15v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
57~75ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.2~2.5v |
| 耗散功率Pd
Power Dissipation |
400mW/0.4W |
| Description & Applications |
?N-Channel Junction Silicon FET ?High-Frequency Low-Noise Amplifier ?Adoption of FBET process. ?Amateur radio equipment. ?UHF amplifiers, MIX, OSC, analog switches. |
| 描述与应用 |
?N沟道结硅FET ?高频低噪声放大器 ?通过过程FBET。 ?业余无线电装备。 ?UHF放大器，MIX，OSC，模拟开关。 |
| 技术文档PDF下载 |
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