XN6534 7F 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
集电极连续输出电流IC
Collector Current(IC) |
15mA |
截止频率fT
Transtion Frequency(fT) |
650MHz |
直流电流增益hFE
DC Current Gain(hFE) |
40~260 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
|
耗散功率Pc
Power Dissipation |
200mW |
Description & Applications |
Features ? Silicon NPN epitaxial planer transistor ? Two elements incorporated into one package. ? Reduction of the mounting area and assembly cost by one half. Applications ? For high-frequency amplification |
描述与应用 |
特点 ?NPN硅外延刨床晶体管 ?两个要素纳入一包装。 ?减少安装面积和汇编一半的费用。 应用 ?对于高频放大 |
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