XN5601 4N 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V/50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/100mA |
| 截止频率fT
Transtion Frequency(fT) |
80MHz/150MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
160~460 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
-300mA/100mA |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) ? Two elements incorporated into one package. ? Reduction of the mounting area and assembly cost by one half. Applications ? For general amplification |
| 描述与应用 |
特点 ?硅外延刨床PNP晶体管（TR1）硅NPN外延刨床晶体管的（TR2） ?两个要素纳入一包装。 ?减少安装面积和汇编一半的费用。 应用 ?对于一般的放大 |
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