XN5531 5M 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
1900MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
500mV |
| 耗散功率Pc
Power Dissipation |
200mW |
| Description & Applications |
Features ? Silicon NPN epitaxial planer transistor ? Two elements incorporated into one package. ? Reduction of the mounting area and assembly cost by one half. Applications ? For high frequency oscillation and mixing |
| 描述与应用 |
特点 ?NPN硅外延刨床晶体管 ?两个要素纳入一包装。 ?减少安装面积和汇编一半的费用。 应用 ?对于高频率振荡和混合 |
| 技术文档PDF下载 |
在线阅读  |
