XN4505 DZ 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V/25V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/20V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/500mA |
| 截止频率fT
Transtion Frequency(fT) |
150MHz/200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
160~460/200~800 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/130mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? NPN epitaxial planer transistor ? Two elements incorporated into one package. ? Reduction of the mounting area and assembly cost by one half. Applications ? For general amplification (Tr1) ? For amplification of low frequency output (Tr2) |
| 描述与应用 |
特点 ?NPN外延刨床晶体管 ?两个要素纳入一包装。 ?减少安装面积和汇编一半的费用。 应用 ?对于一般的放大（TR1） ?放大低频输出（TR2） |
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