XN1871 5T 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-30v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.5~1.2ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.1~-1.5v |
| 耗散功率Pd
Power Dissipation |
300mW/0.3W |
| Description & Applications |
?Silicon n-channel junction FET ?For low-frequency amplification |
| 描述与应用 |
?硅N沟道结型场效应管 ?对于低频放大 |
| 技术文档PDF下载 |
在线阅读  |
