XN0439000L DY 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA/-500mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
0.27KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
5KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.054 |
| 直流电流增益hFE
DC Current Gain(hFE) |
60/20 |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features ?silicon NPN epitaxial planar type(Tr1) silicon PNP epitaxial planar type(Tr2) ?two elements incorporated into one package (transistors with built-in resistor) ?reduction of the mounting area and assembly cost by one half |
| 描述与应用 |
特点 ?NPN硅外延平面型（TR1）硅PNP外延平面型（TR2） ?两个元素纳入一个封装中（内置电阻的晶体管） ?减少安装面积和装配成本的一半 |
| 技术文档PDF下载 |
在线阅读  |
