VEC2901 AA 的参数 |
| FET类型
Type |
MOSFET N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
| 最大漏极电流Id
Drain Current |
150mA/1.5A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
3700m?@ VGS = 4V, ID = 80mA |
| 跨导
Forward Transfer Admittance |
220ms@VDS=10V,Id=80mA |
| IDSS(Vgs=0V) |
|
| 开启电压Vgs（th）/关断电压Vgs（off）
Gate-Source Threshold/Cut-off Voltage |
0.4~1.3V |
| BJT 类型
Type |
NPN |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
100V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
5A |
| 截止频率fT
Transtion Frequency(fT) |
330MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
250~400 |
| 耗散功率Pd
Power Dissipation |
250mW/0.25W |
| Description & Applications |
TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features ? Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting. ? Ultrasmall package permitting applied sets to be made small and slim. |
| 描述与应用 |
TR：NPN平面外延硅晶体管 场效应管：N-沟道硅MOSFET 开关，Flash应用程序 特点 ?复合型NPN晶体管和N沟道MOS场效应管包含在一个包装促进高密度安装。 ?超小封装允许应用集小型和超薄。 |
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