VEC2605 BV 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V/-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V/10V |
| 最大漏极电流Id
Drain Current |
3A/-1A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
58m?@ VGS = 4V, ID = 2000mA/ 500m?@ VGS = -4V, ID = -500mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.5~1.3V/-0.4~-1.4V |
| 耗散功率Pd
Power Dissipation |
900mW/0.9W |
| Description & Applications |
P-Channel and N-Channel Silicon MOSFET Features ? Best suited for DC/DC converters. ? The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. ? 2.5V drive. ? Mounting height 0.75mm. |
| 描述与应用 |
P沟道和N沟道硅MOSFET 特点 ?最适合DC/ DC转换器。 ?VEC2605采用了P沟道MOSFET和一个N沟道MOSFET，具有低导通电阻 超高速交换，从而实现高密度安装。 ?2.5V驱动。 ?安装高度0.75毫米。 |
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